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MOSFET N/P-CH 20V 0.1A VMT6
SCR 200V 550A T72
INSULATION DISPLACEMENT TERMINAL
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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Logic Level Gate, 1.2V Drive |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 100mA |
| rds on (max) @ id, vgs: | 3.5Ohm @ 100mA, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 7.1pF @ 10V |
| 功率 - 最大值: | 120mW |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-SMD, Flat Leads |
| 供应商设备包: | VMT6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
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