English
简体中文
HEATSINK 60X60X20MM XCUT T412
MOSFET 2N-CH 40V 5.2A 8SOIC
MODULE SPM 600V 20A SPMAA
SPREAD SPECTRUM MEMS OSC +-0.5%
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 40V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.2A |
| rds on (max) @ id, vgs: | 31mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18.6nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 945pF @ 20V |
| 功率 - 最大值: | 1.42W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRF7342QTRIR (Infineon Technologies) |
MOSFET 2P-CH 55V 3.4A 8SOIC |
|
EFC8811R-TFSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 6CSP |
|
SI1965DH-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 12V 1.3A SC70-6 |
|
HAF1002-90LRochester Electronics |
15A, 60V, P-CHANNEL MOSFET |
|
EFC6601R-TRSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH EFCP |
|
HUF76419D3STR4921Rochester Electronics |
20A, 60V, 0.043OHM, N CHANNEL , |
|
SH8M13GZETBROHM Semiconductor |
MIDDLE POWER MOSFET SERIES (DUAL |
|
FDMS3602SRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
IRFF311Rochester Electronics |
TRANS MOSFET N-CH 350V 5.5A |
|
NTMD6N02R2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2N7002DS6Rectron USA |
MOSFET 2 N-CH 60V 250MA SOT363 |
|
IPI60R165CPRochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
CSD87381PTTexas Instruments |
MOSFET 2N-CH 30V 15A 5PTAB |