RES SMD 665 OHM 1% 1/10W 0603
CAP CER 220PF 250V C0G/NP0 RAD
MOSFET 2N-CH 6CSP
FIXED IND 68UH 2.4A 120 MOHM TH
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) Common Drain |
场效应管特征: | Logic Level Gate, 2.5V Drive |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | - |
功率 - 最大值: | 2.5W |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 6-SMD, No Lead |
供应商设备包: | 6-CSP (1.77x3.54) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI1965DH-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 12V 1.3A SC70-6 |
|
HAF1002-90LRochester Electronics |
15A, 60V, P-CHANNEL MOSFET |
|
EFC6601R-TRSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH EFCP |
|
HUF76419D3STR4921Rochester Electronics |
20A, 60V, 0.043OHM, N CHANNEL , |
|
SH8M13GZETBROHM Semiconductor |
MIDDLE POWER MOSFET SERIES (DUAL |
|
FDMS3602SRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
IRFF311Rochester Electronics |
TRANS MOSFET N-CH 350V 5.5A |
|
NTMD6N02R2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2N7002DS6Rectron USA |
MOSFET 2 N-CH 60V 250MA SOT363 |
|
IPI60R165CPRochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
CSD87381PTTexas Instruments |
MOSFET 2N-CH 30V 15A 5PTAB |
|
BSO200N03Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SI3585CDV-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 20V 3.9A 6TSOP |