类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 2.4A |
rds on (max) @ id, vgs: | 135mOhm @ 1.7A, 10V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 12nC @ 10V |
输入电容 (ciss) (max) @ vds: | 210pF @ 25V |
功率 - 最大值: | 1.25W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | Micro8™ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQS4900TFSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 60V/300V 8SOP |
|
SPP03N60C3Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
SI4948BEY-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 60V 2.4A 8-SOIC |
|
IRF7104PBFRochester Electronics |
HEXFET POWER MOSFET |
|
SIZ342DT-T1-GE3Vishay / Siliconix |
MOSFET DL N-CH 30V POWERPAIR3X3 |
|
NDS9947Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
DMN2024UTS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSSOP-8 T&R |
|
FDC6401NSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 3A SSOT-6 |
|
ALD310704SCLAdvanced Linear Devices, Inc. |
MOSFET 4 P-CH 8V 16SOIC |
|
DMNH6042SSDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 60V 16.7A 8SO |
|
IRFHE4250DTRPBFRochester Electronics |
HEXFET POWER MOSFET |
|
IRF9389TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO |
|
ALD110908ASALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |