English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.6A |
| rds on (max) @ id, vgs: | 100mOhm @ 1.8A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 25nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 440pF @ 25V |
| 功率 - 最大值: | 2W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI4936BDY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 6.9A 8-SOIC |
|
BUK9K5R6-30EXNexperia |
MOSFET 2N-CH 30V 40A 56LFPAK |
|
IPW80R290C3AFKSA1Rochester Electronics |
PFET, 17A I(D), 800V, 0.29OHM, 1 |
|
ALD210808ASCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC |
|
SH8M3TB1ROHM Semiconductor |
MOSFET N/P-CH 30V 5A/4.5A SOP8 |
|
FDMA1028NZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 3.7A 6MICROFET |
|
SI7234DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 12V 60A PPAK SO-8 |
|
DMN6040SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 5A 8SO |
|
SIA910EDJ-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 12V 4.5A SC-70-6 |
|
NTLUD3191PZTAGRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
2N7002DWH6327XTSA1IR (Infineon Technologies) |
MOSFET 2N-CH 60V 0.3A SOT363 |
|
EL7222CSZE9044Rochester Electronics |
BUFFER/INVERTER BASED MOSFET DRI |
|
STS5DNF60LSTMicroelectronics |
MOSFET 2N-CH 60V 5A 8-SOIC |
