MOSFET 2 N-CH 80V POWERPAK SO8
NANO-D 21POS FEMALE W/ 18IN WIRE
STAINLESS STEEL LEVEL SENSOR
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 80V |
电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
rds on (max) @ id, vgs: | 19mOhm @ 8A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 32nC @ 10V |
输入电容 (ciss) (max) @ vds: | 1400pF @ 25V |
功率 - 最大值: | 48W |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | PowerPAK® SO-8 Dual |
供应商设备包: | PowerPAK® SO-8 Dual |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDMD8260LET60Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 15A 12POWER |
|
PMDPB70EN,115Rochester Electronics |
PMDPB70EN - SMALL SIGNAL, HUSON6 |
|
DMN2400UV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 1.33A SOT563 |
|
MCH6631-TL-E-SYRochester Electronics |
N CHANNEL AND P CHANNEL SILICON |
|
IPU80R750P7AKMA1-NDRochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
ADP3110KRZ-RL-ADRochester Electronics |
DUAL BOOTSTRAPPED 12 VOLT MOSFET |
|
CA5130AM96Rochester Electronics |
OPERATIONAL AMPLIFIER W/MOSFET I |
|
STL8DN6LF3STMicroelectronics |
MOSFET 2N-CH 60V 20A 5X6 |
|
MCM2301-TPMicro Commercial Components (MCC) |
P-CHANNEL,MOSFETS,DFN2020-6L PAC |
|
SP8M5FRATBROHM Semiconductor |
4V DRIVE NCH+PCH MOSFET |
|
DMG1016UDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V SOT363 |
|
2N7002PV,115Nexperia |
MOSFET 2N-CH 60V 0.35A SOT-666 |
|
FF2MR12KM1HOSA1IR (Infineon Technologies) |
MEDIUM POWER 62MM |