English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.7A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4.9Ohm @ 1.35A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 23 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 660 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 85W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTD65N03RRochester Electronics |
MOSFET N-CH 25V 9.5A/32A DPAK |
|
STD2NK90Z-1STMicroelectronics |
MOSFET N-CH 900V 2.1A IPAK |
|
FDA59N30Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 300V 59A TO3PN |
|
BSZ180P03NS3EGATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 9A/39.5A TSDSON |
|
R5009FNXROHM Semiconductor |
MOSFET N-CH 500V 9A TO220FM |
|
FQL40N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 40A TO264-3 |
|
SQM40020E_GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO263 |
|
BUK7E4R6-60E,127Nexperia |
MOSFET N-CH 60V 100A I2PAK |
|
BSB028N06NN3GXUMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 22A/90A 2WDSON |
|
NTE2385NTE Electronics, Inc. |
MOSFET N-CHANNEL 500V 8A TO220 |
|
BUK9Y72-80E,115Nexperia |
MOSFET N-CH 80V 15A LFPAK56 |
|
AOB15S65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 15A TO263 |
|
SI4896DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 6.7A 8SO |
