English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4.3Ohm @ 1A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 12.7 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 210 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 35W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220FM |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PSMN8R2-80YS,115Nexperia |
MOSFET N-CH 80V 82A LFPAK56 |
|
NTB25P06T4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 27.5A D2PAK |
|
SI8802DB-T2-E1Vishay / Siliconix |
MOSFET N-CH 8V 4MICROFOOT |
|
IPL60R125C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 17A 4VSON |
|
NTMSD3P303R2Rochester Electronics |
MOSFET P-CH 30V 2.34A 8SOIC |
|
RSS065N06FRATBROHM Semiconductor |
MOSFET N-CH 60V 6.5A 8SOP |
|
NTMSD2P102LR2GRochester Electronics |
MOSFET P-CH 20V 2.3A 8SOIC |
|
TPIC5302DRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF3205LPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 110A TO262 |
|
BUK952R8-60E,127Rochester Electronics |
MOSFET N-CH 60V 120A TO220AB |
|
TSM045NA03CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 108A 8PDFN |
|
APT30M36JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 300V 76A ISOTOP |
|
STW5NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 3.5A TO247-3 |
