English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 18A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 490mOhm @ 12A, 10V |
| vgs(th) (最大值) @ id: | 6.5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 140 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 7200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 500W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | ISOPLUS247™ |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD50N06S3L-06Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPB80N04S204ATMA2Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
SSM3J334R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 4A SOT23F |
|
FQU1N60CTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 1A IPAK |
|
IXTP32P05TWickmann / Littelfuse |
MOSFET P-CH 50V 32A TO220AB |
|
IXFT58N20Wickmann / Littelfuse |
MOSFET N-CH 200V 58A TO268 |
|
IPB100N06S3-04Rochester Electronics |
MOSFET N-CH 55V 100A TO263-3 |
|
AON7380Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 24A 8DFN |
|
TQM070NB04CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 15A/75A 8PDFNU |
|
STL4P2UH7STMicroelectronics |
MOSFET P-CH 20V 4A POWERFLAT |
|
IPL65R195C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 12A 4VSON |
|
STI55NF03LSTMicroelectronics |
MOSFET N-CH 30V 55A I2PAK |
|
MTD5N25ERochester Electronics |
N-CHANNEL POWER MOSFET |
