English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DTMOSIV |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.2Ohm @ 2.6A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 170µA |
| 栅极电荷 (qg) (max) @ vgs: | 10.5 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 380 pF @ 300 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 30W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220SIS |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMTH6016LFVW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 41A POWERDI3333 |
|
FQNL1N50BBURochester Electronics |
MOSFET N-CH 500V 270MA TO92-3 |
|
RUE003N02TLROHM Semiconductor |
MOSFET N-CH 20V 300MA EMT3 |
|
IPWS65R050CFD7AXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 45A TO247-3-41 |
|
IPI70N04S406AKSA1Rochester Electronics |
MOSFET N-CH 40V 70A TO262-3 |
|
SI7463DP-T1-E3Vishay / Siliconix |
MOSFET P-CH 40V 11A PPAK SO-8 |
|
PMZ290UN315Rochester Electronics |
SMALL SIGNAL FET |
|
AOD458Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 250V 14A TO252 |
|
DMN24H3D5L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 240V 480MA SOT23 |
|
IRFHS8342TR2PBFRochester Electronics |
MOSFET N-CH 30V 8.8A/19A TSDSON |
|
FDB8030LRochester Electronics |
80A, 30V, 0.0035OHM, N-CHANNEL, |
|
PSMN005-75B,118Nexperia |
MOSFET N-CH 75V 75A D2PAK |
|
2SK3746Rochester Electronics |
MOSFET N-CH 1500V 2A TO3PB |
