English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7.7A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.4Ohm @ 2.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 25.2 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 886 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 125W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDB8445-F085Rochester Electronics |
MOSFET N-CH 40V 70A TO263AB |
|
NTTFS4945NTAGRochester Electronics |
MOSFET N-CH 30V 7.1A/34A 8WDFN |
|
FQD7N10LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 5.8A DPAK |
|
IXTN120P20TWickmann / Littelfuse |
MOSFET P-CH 200V 106A SOT227B |
|
NDT03N40ZT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 500MA SOT223 |
|
STWA20N95DK5STMicroelectronics |
MOSFET N-CH 950V 18A TO247 |
|
IPI100N06S3L-03Rochester Electronics |
MOSFET N-CH 55V 100A TO262-3 |
|
AUIRFR5305TRIR (Infineon Technologies) |
MOSFET P-CH 55V 31A DPAK |
|
IPD034N06N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A TO252-3 |
|
AOD360A70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 12A TO252 |
|
VN0606L-G-P003Roving Networks / Microchip Technology |
MOSFET N-CH 60V 330MA TO92-3 |
|
IPB120N04S404ATMA1Rochester Electronics |
MOSFET N-CH 40V 120A D2PAK |
|
RD3L050SNTL1ROHM Semiconductor |
MOSFET N-CH 60V 5A TO252 |
