English
简体中文
MOSFET N-CH 600V 21A D2PAK
1MM UNINSULATED SHORTING PLUG
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, FDmesh™ II |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 160mOhm @ 10.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 80 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 2400 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 160W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TSM60NB1R4CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 3A TO252 |
|
CSD25485F5Texas Instruments |
MOSFET P-CH 20V 3.2A 3PICOSTAR |
|
IPI70N10SL16AKSA1Rochester Electronics |
MOSFET N-CH 100V 70A TO262-3 |
|
TK11P65W,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 11.1A DPAK |
|
BUK9875-100A/C1115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BUK9611-80E,118Nexperia |
MOSFET N-CH 80V 75A D2PAK |
|
IXFX80N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 80A PLUS247-3 |
|
IXTA08N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 800MA TO263 |
|
IPD65R1K4C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 3.2A TO252-3 |
|
PMV37EN2RNexperia |
MOSFET N-CH 30V 4.5A TO236AB |
|
PSMN034-100PS,127Nexperia |
MOSFET N-CH 100V 32A TO220AB |
|
FCPF190N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 20.2A TO220F |
|
STB30NF20STMicroelectronics |
MOSFET N-CH 200V 30A D2PAK |