类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 18A (Ta), 40A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 4mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 11 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1463 pF @ 15 V |
场效应管特征: | Schottky Diode (Body) |
功耗(最大值): | 2.1W (Ta), 37W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TSDSON-8-FL |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
HUF76129D3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDMA430NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 5A 6MICROFET |
|
FDT1600N10ALZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 5.6A SOT223-4 |
|
SI7848BDP-T1-E3Vishay / Siliconix |
MOSFET N-CH 40V 47A PPAK SO-8 |
|
IPL60R299CPAUMA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
STU11N65M2STMicroelectronics |
MOSFET N-CH 650V 7A IPAK |
|
IRFR3910TRPBFRochester Electronics |
IRFR3910 - 12V-300V N-CHANNEL PO |
|
SCT3105KLHRC11ROHM Semiconductor |
SICFET N-CH 1200V 24A TO247N |
|
NVMTS0D4N04CLTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 553.8A 8DFNW |
|
HUF75637S3STRochester Electronics |
MOSFET N-CH 100V 44A D2PAK |
|
NDB7052LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SFT1440-ERochester Electronics |
MOSFET N-CH 600V 1.5A TP |
|
XPH6R30ANB,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 45A 8SOP |