类型 | 描述 |
---|---|
系列: | NexFET™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 80 V |
电流 - 连续漏极 (id) @ 25°c: | 100A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 2.3mOhm @ 100A, 10V |
vgs(th) (最大值) @ id: | 3.2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 156 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 12200 pF @ 40 V |
场效应管特征: | - |
功耗(最大值): | 375W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220-3 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI4114DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 20A 8SO |
|
BSC040N08NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A TDSON |
|
DMT47M2SFVW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V PWRDI3333 |
|
SIHG80N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 80A TO247AC |
|
R6024KNZ1C9ROHM Semiconductor |
MOSFET N-CHANNEL 600V 24A TO247 |
|
IRFBC20PBF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 2.2A TO220AB |
|
IXTX210P10TWickmann / Littelfuse |
MOSFET P-CH 100V 210A PLUS247-3 |
|
IRFR120TRRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
SIDR870ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 95A PPAK SO-8DC |
|
ZVP4525ZTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 250V 205MA SOT89-3 |
|
FDS6679Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 13A 8SOIC |
|
STD60NF55LAT4STMicroelectronics |
MOSFET N-CH 55V 60A DPAK |
|
HUF75307D3STRochester Electronics |
MOSFET N-CH 55V 15A TO252 |