English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 12 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.4A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V |
| rds on (max) @ id, vgs: | 25mOhm @ 3A, 4.5V |
| vgs(th) (最大值) @ id: | 900mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15.4 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 1.06 pF @ 6 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 556mW (Ta), 12.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-WLCSP (1.48x.98) |
| 包/箱: | 6-XFBGA, WLCSP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIR108DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 100V 12.4A/45A PPAK |
|
BSH207,135Rochester Electronics |
MOSFET P-CH 12V 1.52A 6TSOP |
|
AUIRF540ZSIR (Infineon Technologies) |
MOSFET N-CH 100V 36A D2PAK |
|
FQPF33N10Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
AOWF600A70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 8.5A TO262F |
|
IRFF233Rochester Electronics |
4.5A, 150V, 0.6OHM, N-CHANNEL PO |
|
RSJ400N06FRATLROHM Semiconductor |
MOSFET N-CH 60V 40A LPTS |
|
IPD530N15N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 21A TO252-3 |
|
NTMFS4835NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A/130A 5DFN |
|
IPB180N04S400ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO263-7 |
|
SISS65DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 25.9A/94A PPAK |
|
2SK4080-ZK-E1-AYRochester Electronics |
MOSFET N-CH 30V 48A TO252 |
|
IPT111N20NFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 96A 8HSOF |
