类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, OptiMOS™ |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2.4mOhm @ 100A, 10V |
vgs(th) (最大值) @ id: | 4V @ 200µA |
栅极电荷 (qg) (max) @ vgs: | 270 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 21.9 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 250W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220-3-1 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDMS86500DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 29A DLCOOL56 |
|
TK17E80W,S1XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 800V 17A TO220 |
|
IRF3805PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO220AB |
|
STP18N65M2STMicroelectronics |
MOSFET N-CH 650V 12A TO220 |
|
RCD075N19TLROHM Semiconductor |
MOSFET N-CH 190V 7.5A CPT3 |
|
TSM9N90ECI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 900V 9A ITO220AB |
|
MCH3375-TL-HRochester Electronics |
MOSFET P-CH 30V 1.6A SC70 |
|
BSH205G2235Rochester Electronics |
P-CHANNEL MOSFET |
|
BUK9628-100A,118Nexperia |
MOSFET N-CH 100V 49A D2PAK |
|
NTD3055L170T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9A DPAK |
|
AUIRLL024NTR-IRRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
IPB120N06S402ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO263-3 |
|
RW1C020UNT2RROHM Semiconductor |
MOSFET N-CH 20V 2A 6WEMT |