English
简体中文
MOSFET N-CH 30V 11A TSMT8
IC DRAM 2GBIT PARALLEL 96TWBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V |
| rds on (max) @ id, vgs: | 9mOhm @ 4.5A, 11V |
| vgs(th) (最大值) @ id: | 1.5V @ 10mA |
| 栅极电荷 (qg) (max) @ vgs: | 22 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 2410 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TSMT8 |
| 包/箱: | 8-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFH7004TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8PQFN |
|
RM30N100LDRectron USA |
MOSFET N-CH 100V 30A TO252-2 |
|
NTMFS5C612NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 36A/235A 5DFN |
|
BSL302SNL6327Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
VP0550N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 500V 54MA TO92-3 |
|
DMP2040UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 13A 6UDFN |
|
IPW65R150CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 22.4A TO247-3 |
|
SI2312BDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 3.9A SOT23-3 |
|
IRFR110TRPBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
CSD22206WTexas Instruments |
MOSFET P-CH 8V 5A 9DSBGA |
|
BSC889N03MSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AOI7N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 7A TO251A |
|
NTTFS4840NTAGRochester Electronics |
MOSFET N-CH 30V 4.6A/26A 8WDFN |