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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PMPB100ENEXNexperia |
MOSFET DFN2020MD-6 |
|
FCD9N60NTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 9A DPAK |
|
PSMN013-30YLC,115Nexperia |
MOSFET N-CH 30V 32A LFPAK56 |
|
NTR1P02T1Rochester Electronics |
MOSFET P-CH 20V 1A SOT23-3 |
|
MTD3302T4Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
FDMS86350ET80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 25A/198A POWER56 |
|
NVMFS6B05NT1GRochester Electronics |
MOSFET N-CH 100V 5DFN |
|
BSC032NE2LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 22A/84A TDSON |
|
FDP5500Rochester Electronics |
N CHANNEL ULTRAFET 55V, 80A, 7M |
|
SIHB33N60ET5-GE3Vishay / Siliconix |
MOSFET N-CH 600V 33A TO263 |
|
SSM6J215FE(TE85L,FToshiba Electronic Devices and Storage Corporation |
MOSFET P CH 20V 3.4A ES6 |
|
SSM3K37CT,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 200MA CST3 |
|
SPA04N80C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4A TO220-FP |
