类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 1A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.5V, 4.5V |
rds on (max) @ id, vgs: | 510mOhm @ 1A, 4.5V |
vgs(th) (最大值) @ id: | 950mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 1.4 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 122 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 350mW (Ta), 6.25W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DFN1006-3 |
包/箱: | SC-101, SOT-883 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TSM480P06CH X0GTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 60V 20A TO251 |
|
STD70N10F4STMicroelectronics |
MOSFET N-CH 100V 60A DPAK |
|
BSP316PL6327Rochester Electronics |
P-CHANNEL MOSFET |
|
IPI80N04S2H4AKSA2Rochester Electronics |
MOSFET N-CH 40V 80A TO262-3 |
|
ZXMN10A08GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 2A SOT223 |
|
IRF9328TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 12A 8SO |
|
IXFX220N17T2Wickmann / Littelfuse |
MOSFET N-CH 170V 220A PLUS247-3 |
|
STD18N60M6STMicroelectronics |
MOSFET N-CH 600V 13A DPAK |
|
SSM6J501NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 10A 6UDFNB |
|
PMF250XN,115Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
G3R160MT12JGeneSiC Semiconductor |
SIC MOSFET N-CH 22A TO263-7 |
|
SI3460BDV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 8A 6TSOP |
|
RJL60S5DPP-E0#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |