类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RF1K49092Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
IRFI644GPBFVishay / Siliconix |
MOSFET N-CH 250V 7.9A TO220-3 |
|
DMT10H010LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 9.4A PWRDI5060 |
|
IRFZ44ESTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 48A D2PAK |
|
PSMN8R5-40MSDXNexperia |
MOSFET N-CH 40V 60A LFPAK33 |
|
STD105N10F7AGSTMicroelectronics |
MOSFET N-CH 100V 80A DPAK |
|
MCQ4406-TPMicro Commercial Components (MCC) |
MOSFET N-CH 30V 10A 8SOP |
|
TSM60NB380CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 9.5A TO251 |
|
IRFZ14PBF-BE3Vishay / Siliconix |
MOSFET N-CH 60V 10A TO220AB |
|
IPD65R600C6BTMA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
IRFU5305PBFIR (Infineon Technologies) |
MOSFET P-CH 55V 31A IPAK |
|
IPB020N10N5LFATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A TO263-3 |
|
FDB2614Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 62A D2PAK |