English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 650mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.7V, 4.5V |
| rds on (max) @ id, vgs: | 1.1Ohm @ 500mA, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 1.5 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 63 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 750mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SC-88 (SC-70-6) |
| 包/箱: | 6-TSSOP, SC-88, SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPI80N06S3-07Rochester Electronics |
MOSFET N-CH 55V 80A TO262-3 |
|
IPA057N06N3GRochester Electronics |
IPA057N06 - 12V-300V N-CHANNEL P |
|
BSS606NH6327Rochester Electronics |
BSS606 - 250V-600V SMALL SIGNAL |
|
STL16N60M6STMicroelectronics |
MOSFET N-CH 600V POWERFLAT HV |
|
MCU20P10-TPMicro Commercial Components (MCC) |
MOSFET P-CH 100V 20A DPAK |
|
IPB60R280P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 12A D2PAK |
|
AUIRL1404SRochester Electronics |
MOSFET N-CH 40V 160A DPAK |
|
STD13N60M6STMicroelectronics |
MOSFET N-CH 600V 10A DPAK |
|
IPI70N10S3L12AKSA1Rochester Electronics |
MOSFET N-CH 100V 70A TO262-3 |
|
SIHW47N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 47A TO247AD |
|
IRF9620SPBFVishay / Siliconix |
MOSFET P-CH 200V 3.5A D2PAK |
|
APT20M11JLLRoving Networks / Microchip Technology |
MOSFET N-CH 200V 176A ISOTOP |
|
IPB65R310CFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11.4A D2PAK |
