English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 31A (Ta), 156A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.9mOhm @ 94A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 150µA |
| 栅极电荷 (qg) (max) @ vgs: | 134 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5.469 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.3W (Ta), 83W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DIRECTFET L6 |
| 包/箱: | DirectFET™ Isometric L6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXFT150N20TWickmann / Littelfuse |
MOSFET N-CH 200V 150A TO268 |
|
FDU8896Rochester Electronics |
MOSFET N-CH 30V 17A/94A IPAK |
|
FDN372SRochester Electronics |
MOSFET N-CH 30V 2.6A SUPERSOT3 |
|
IPB45N04S4L08ATMA1Rochester Electronics |
MOSFET N-CH 40V 45A TO263-3 |
|
SQD50034E_GE3Vishay / Siliconix |
MOSFET N-CH 60V 100A TO252AA |
|
NXV55UNRNexperia |
NXV55UN/SOT23/TO-236AB |
|
IPP45N06S4L08AKSA2Rochester Electronics |
PFET, 45A I(D), 60V, 0.0079OHM, |
|
XP151A12A2MRTorex Semiconductor Ltd. |
MOSFET N-CH 20V 1A SOT23 |
|
BUK663R2-40C,118Rochester Electronics |
PFET, 100A I(D), 40V, 0.0057OHM, |
|
SISS98DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 14.1A PPAK |
|
FQD12N20LTM-F085PSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 9A TO252 |
|
IRL530NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A D2PAK |
|
AON2406Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 8A 6DFN |
