MOSFET N-CH 30V 65A 8VSON
SENSOR DIGITAL -40C-90C 8VSSOP
DC DC CONVERTER 5V 3W
类型 | 描述 |
---|---|
系列: | NexFET™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 65A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 8V |
rds on (max) @ id, vgs: | 12.2mOhm @ 11A, 8V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 3.4 nC @ 4.5 V |
vgs (最大值): | ±10V |
输入电容 (ciss) (max) @ vds: | 506 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 3W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-VSONP (5x6) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STFI12N60M2STMicroelectronics |
MOSFET N-CH 600V 9A I2PAKFP |
|
DMNH6011LK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 55V 80A TO252 T&R |
|
STD10N60M6STMicroelectronics |
MOSFET N-CH 600V 6.4A DPAK |
|
RS1E240BNTBROHM Semiconductor |
MOSFET N-CH 30V 24A 8HSOP |
|
DMP2110UW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 2A SOT323 |
|
IMBG120R140M1HXTMA1IR (Infineon Technologies) |
TRANS SJT N-CH 1.2KV 18A TO263 |
|
BF2040E6814HTSARochester Electronics |
RF N-CHANNEL MOSFET |
|
FDME430NTRochester Electronics |
MOSFET N-CH 30V 6A MICROFET |
|
SIHF9640S-GE3Vishay / Siliconix |
MOSFET P-CH 200V 11A D2PAK |
|
STP32N65M5STMicroelectronics |
MOSFET N-CH 650V 24A TO220AB |
|
BSC029N025SGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AOT15S65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 15A TO220 |
|
2SK3700(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 900V 5A TO3P |