English
简体中文
HEATSINK 35X35X30MM L-TAB T766
SINGLE P-CHANNEL POWER MOSFET -2
COMP O=1.000,L=8.00,W=.105
INVERTER 12V-INPUT 900V-OUTPUT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.3A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 220mOhm @ 750mA, 4.5V |
| vgs(th) (最大值) @ id: | 1.25V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 3.1 nC @ 4 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 225 pF @ 5 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 400mW (Ta) |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQAF70N15Rochester Electronics |
MOSFET N-CH 150V 44A TO3PF |
|
NDD03N80ZT4GRochester Electronics |
MOSFET N-CH 800V 2.9A DPAK-3 |
|
BUK9226-75A,118Nexperia |
MOSFET N-CH 75V 45A DPAK |
|
BSP603S2LNTRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AO4296Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 13.5A 8SOIC |
|
TK11A60D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 11A TO220SIS |
|
DMN30H4D0LFDE-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 300V 550MA 6UDFN |
|
FQB9N50CFTMRochester Electronics |
MOSFET N-CH 500V 9A D2PAK |
|
SPD30N03S2L-20GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
MCH6321-TL-ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4A 6MCPH |
|
STI11NM80STMicroelectronics |
MOSFET N-CH 800V 11A I2PAK |
|
IPC50N04S55R8ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 50A 8TDSON-33 |
|
RCX510N25ROHM Semiconductor |
MOSFET N-CH 250V 51A TO-220FM |