English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 450mOhm @ 300mA, 4.5V |
| vgs(th) (最大值) @ id: | 950mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 1.9 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 127 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 360mW (Ta), 3.125W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DFN1006B-3 |
| 包/箱: | 3-XFDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP052NE7N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 75V 80A TO220-3 |
|
APT5010B2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 46A T-MAX |
|
NDS335NRochester Electronics |
MOSFET N-CH 20V 1.7A SUPERSOT3 |
|
TN2524N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 240V 360MA TO243AA |
|
IXFP30N25X3MWickmann / Littelfuse |
MOSFET N-CH 250V 30A TO220 |
|
CSD17381F4TTexas Instruments |
MOSFET N-CH 30V 3.1A 3PICOSTAR |
|
IRFZ44NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 49A D2PAK |
|
IPP065N04N GRochester Electronics |
MOSFET N-CH 40V 50A TO220-3 |
|
FQB8P10TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 8A D2PAK |
|
STP10N105K5STMicroelectronics |
MOSFET N-CH 1050V 6A TO220 |
|
FQPF2NA90Rochester Electronics |
MOSFET N-CH 900V 1.7A TO220F |
|
IRF9Z34PBFVishay / Siliconix |
MOSFET P-CH 60V 18A TO220AB |
|
IXFB132N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 132A PLUS264 |
