English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PolarP™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 36A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 110mOhm @ 18A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 55 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3100 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3P |
| 包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTB4302GRochester Electronics |
MOSFET N-CH 30V 74A D2PAK |
|
IXTA1R6N100D2Wickmann / Littelfuse |
MOSFET N-CH 1000V 1.6A TO263 |
|
FQI16N25CTURochester Electronics |
MOSFET N-CH 250V 15.6A I2PAK |
|
RE1C001UNTCLROHM Semiconductor |
MOSFET N-CH 20V 100MA EMT3F |
|
SSM3K56ACT,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 1.4A CST3 |
|
IRF9540NSTRLPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 23A D2PAK |
|
IRFI634GPBFVishay / Siliconix |
MOSFET N-CH 250V 5.6A TO220-3 |
|
IPW90R800C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PH3120L,115-NXPRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
SQM120N02-1M3L_GE3Vishay / Siliconix |
MOSFET N-CH 20V 120A TO263 |
|
SI7414DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 5.6A PPAK1212-8 |
|
FCP600N60ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7.4A TO220-3 |
|
CSD19534KCSTexas Instruments |
MOSFET N-CH 100V 100A TO220-3 |
