CRYSTAL 80.0000MHZ 6PF SMD
MOSFET N-CH 20V 7.5A TSOP-6
MAX6834 ULTRA-LOW-VOLTAGE VOLTAG
M63X1.5 TO M40X1.5 REDUCTION
类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 7.5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 4.5V |
rds on (max) @ id, vgs: | 22mOhm @ 7.5A, 4.5V |
vgs(th) (最大值) @ id: | 1.2V @ 30µA |
栅极电荷 (qg) (max) @ vgs: | 8.7 nC @ 10 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 1147 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 2W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TSOP-6-6 |
包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVMFS5826NLT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
VN2222LL-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 230MA TO92-3 |
|
BSS84PH6433XTMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 170MA SOT23-3 |
|
IRF830ASPBFVishay / Siliconix |
MOSFET N-CH 500V 5A D2PAK |
|
BSS138NH6327XTSA2IR (Infineon Technologies) |
MOSFET N-CH 60V 230MA SOT23-3 |
|
APT23F60BRoving Networks / Microchip Technology |
MOSFET N-CH 600V 24A TO247 |
|
MTB60N10E7LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSC050N03MSGATMA1Rochester Electronics |
PFET, 16A I(D), 30V, 0.0063OHM, |
|
IRFR3303TRPBFRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
CSD23381F4Texas Instruments |
MOSFET P-CH 12V 2.3A 3PICOSTAR |
|
SIHW30N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 29A TO247AD |
|
IRF6810STRPBFRochester Electronics |
PFET, 16A I(D), 25V, 0.0052OHM, |
|
IXFK240N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 240A TO264 |