English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 70A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 10mOhm @ 70A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 260 nC @ 20 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 3.3 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SQS401EN-T1_BE3Vishay / Siliconix |
MOSFET P-CH 40V 16A PPAK1212-8 |
|
RUL035N02FRATRROHM Semiconductor |
MOSFET N-CH 20V 3.5A TUMT6 |
|
BUK9222-55A/C1,118Rochester Electronics |
MOSFET N-CH 55V 48A DPAK |
|
STW52NK25ZSTMicroelectronics |
MOSFET N-CH 250V 52A TO247-3 |
|
CSD18536KTTTTexas Instruments |
MOSFET N-CH 60V 200A/349A DDPAK |
|
SIHU6N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 5.4A IPAK |
|
SI4467DYRochester Electronics |
P-CHANNEL POWER MOSFET |
|
TBB1010KMTL-ERochester Electronics |
RF N-CHANNEL MOSFET |
|
FCPF11N60NTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 10.8A TO220F |
|
IPA65R600C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STL34N65M5STMicroelectronics |
MOSFET N-CH 650V 3.2A PWRFLAT88 |
|
APT5010LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 46A TO264 |
|
FK6K02010LPanasonic |
MOSFET N-CH 20V 4.5A WSMINI6 |
