English
简体中文
RES SMD 332 OHM 0.5% 1/2W 2010
MOSFET N-CH 40V 180A TO263-7
IC MCU 8BIT 32KB FLASH 44PLCC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 180A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.1mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 200µA |
| 栅极电荷 (qg) (max) @ vgs: | 250 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 20000 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 250W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO263-7-3 |
| 包/箱: | TO-263-7, D²Pak (6 Leads + Tab) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI7806ADN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK1212-8 |
|
IPB90N04S402ATMA1Rochester Electronics |
MOSFET N-CH 40V 90A D2PAK |
|
IRFB7440PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 120A TO220AB |
|
STW26N60M2STMicroelectronics |
MOSFET N-CH 600V 20A TO247 |
|
IRLU3410PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A IPAK |
|
SPP80N03S2L-06Rochester Electronics |
MOSFET N-CH 30V 80A TO220-3 |
|
STP35N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V TO220 |
|
STF13N60M2STMicroelectronics |
MOSFET N-CH 600V 11A TO220FP |
|
CPH3351-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 1.8A 3CPH |
|
HUFA75344S3STRochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
|
IPP12CN10LGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 69A TO220-3 |
|
FDS6672ARochester Electronics |
MOSFET N-CH 30V 12.5A 8SOIC |
|
BSC046N02KSGAUMA1IR (Infineon Technologies) |
MOSFET N-CH 20V 19A/80A TDSON |