类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 5.5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 25mOhm @ 5.5A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 8.6 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 355 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 1.25W (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TSMT6 (SC-95) |
包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSC010N04LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 38A/100A TDSON |
|
NDS331NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 1.3A SUPERSOT3 |
|
AUIRLR2908Rochester Electronics |
MOSFET N-CH 80V 30A DPAK |
|
NTD3813NT4GRochester Electronics |
MOSFET N-CH 16V 9.6A/51A DPAK |
|
SSM6K202FE,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 2.3A ES6 |
|
STY112N65M5STMicroelectronics |
MOSFET N-CH 650V 96A MAX247 |
|
MCH6445-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 4A 6MCPH |
|
MCH3374-TL-WRochester Electronics |
MOSFET P-CH 12V 3A SC70FL/MCPH3 |
|
NDS7002ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 280MA SOT-23 |
|
BUK9604-40A,118Nexperia |
MOSFET N-CH 40V 75A D2PAK |
|
NDD60N360U1T4GRochester Electronics |
MOSFET N-CH 600V 11A DPAK |
|
RTL020P02TRROHM Semiconductor |
MOSFET P-CH 20V 2A TUMT6 |
|
AOD6N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 5.3A TO252 |