类型 | 描述 |
---|---|
系列: | STripFET™ III |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 6.5mOhm @ 40A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 54 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2200 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 110W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DPAK |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ZXM61P03FTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 1.1A SOT23-3 |
|
FQU6N40CTU_NBEA001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 4.5A IPAK |
|
AON6418Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 14A/36A 8DFN |
|
NP33N06YDG-E1-AYRenesas Electronics America |
MOSFET N-CH 60V 33A 8HSON |
|
IRL3103SPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 64A D2PAK |
|
SPP100N04S2-04IR (Infineon Technologies) |
MOSFET N-CH 40V 100A TO220-3 |
|
BSP613PL6327HUSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 2.9A SOT223-4 |
|
SI4484EY-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 4.8A 8SO |
|
IRFD120Vishay / Siliconix |
MOSFET N-CH 100V 1.3A 4DIP |
|
SI7366DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 13A PPAK SO-8 |
|
IXFR90N20Wickmann / Littelfuse |
MOSFET N-CH 200V 90A ISOPLUS247 |
|
IXTH10P50Wickmann / Littelfuse |
MOSFET P-CH 500V 10A TO247 |
|
IRLR3410CPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A DPAK |