类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V67703S80BGG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
STK12C68-PF55Rochester Electronics |
IC NVSRAM 64KBIT PARALLEL 28DIP |
|
CY14B101L-SP45XCRochester Electronics |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
IS61WV25616EDBLL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
TMS27PC256-2NLRochester Electronics |
OTP ROM, 32KX8, 200NS PDIP28 |
|
RM24C256DS-LTAI-TAdesto Technologies |
IC CBRAM 256KBIT I2C 1MHZ 8TSSOP |
|
70T659S12BCI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
S29GL256P11FFIV20Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
70V657S15BFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
DS28E07P+TMaxim Integrated |
IC EEPROM 1KBIT 1-WIRE 6TSOC |
|
CY7C1360S-166BZXIRochester Electronics |
IC SRAM 9MBIT 166MHZ 165BGA |
|
S29GL256S10TFB023Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
S29GL256P90FFIR12Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |