English
简体中文
BATTERY PACK ALKALINE 13.5V AA
IC SRAM 1.125MBIT PAR 208CABGA
SWITCH TACTILE SPST-NO 0.05A 12V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 1.125Mb (32K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 3.15V ~ 3.45V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 208-LFBGA |
| 供应商设备包: | 208-CABGA (15x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DS28E07P+TMaxim Integrated |
IC EEPROM 1KBIT 1-WIRE 6TSOC |
|
CY7C1360S-166BZXIRochester Electronics |
IC SRAM 9MBIT 166MHZ 165BGA |
|
S29GL256S10TFB023Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
S29GL256P90FFIR12Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
70V659S10BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
93C66-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
CY15B104QI-20LPXCCypress Semiconductor |
IC FRAM 4MBIT SPI 20MHZ 8GQFN |
|
71V016SA20PHIRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
24C00T-E/OTRoving Networks / Microchip Technology |
IC EEPROM 128B I2C SOT23-5 |
|
S29GL512S11DHV020Rochester Electronics |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
EM6GE16EWXD-10HEtron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
S25FL128SDSNFI003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
IS66WVH16M8DALL-166B1LIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 128MBIT PAR 24TFBGA |