类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL256S10TFB023Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
S29GL256P90FFIR12Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
70V659S10BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
93C66-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
CY15B104QI-20LPXCCypress Semiconductor |
IC FRAM 4MBIT SPI 20MHZ 8GQFN |
|
71V016SA20PHIRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
24C00T-E/OTRoving Networks / Microchip Technology |
IC EEPROM 128B I2C SOT23-5 |
|
S29GL512S11DHV020Rochester Electronics |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
EM6GE16EWXD-10HEtron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
S25FL128SDSNFI003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
IS66WVH16M8DALL-166B1LIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 128MBIT PAR 24TFBGA |
|
CAT93C86BVI-GT3Rochester Electronics |
CAT93C86 - 16-KBIT MICROWIRE SER |
|
93AA66AT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DFN |