







MOSFET N-CH 60V 8A TO252
MOSFET P-CH 20V 150A PWRDI5060-8
IC SRAM 9MBIT PARALLEL 119PBGA
OPTOISOLATOR 5KV TRANSISTOR 8SMD
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 9Mb (256K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 150 MHz |
| 写周期时间 - 字,页: | - |
| 访问时间: | 3.8 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 119-BGA |
| 供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
AM27S191SA/BUARochester Electronics |
AM27S191 - OTP ROM, 2KX8, 30NS |
|
|
24LC014T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
|
IS63WV1024BLL-12TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
|
CY7C172A-45VCRochester Electronics |
STANDARD SRAM, 4KX4, 45NS, CMOS |
|
|
BR24G16FJ-3AGTE2ROHM Semiconductor |
IC EEPROM 16KBIT I2C 1MHZ 8SOPJ |
|
|
24LC256-E/SNRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8SOIC |
|
|
MX25L51245GZ2I-10GMacronix |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
|
W29N01HVSINFWinbond Electronics Corporation |
IC FLASH 1GBIT PARALLEL 48TSOP |
|
|
CY7C1325B-100BGCRochester Electronics |
CACHE SRAM, 256KX18, 8NS |
|
|
S29GL128S90FHA020Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
|
CY7C106B-20VCRochester Electronics |
STANDARD SRAM, 256KX4, 20NS |
|
|
93LC46CXT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8SOIC |
|
|
25AA320A-I/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 8TSSOP |