English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 16Kb (4K x 4) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 24-BSOJ (0.300", 7.62mm Width) |
| 供应商设备包: | 24-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BR24G16FJ-3AGTE2ROHM Semiconductor |
IC EEPROM 16KBIT I2C 1MHZ 8SOPJ |
|
24LC256-E/SNRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8SOIC |
|
MX25L51245GZ2I-10GMacronix |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
W29N01HVSINFWinbond Electronics Corporation |
IC FLASH 1GBIT PARALLEL 48TSOP |
|
CY7C1325B-100BGCRochester Electronics |
CACHE SRAM, 256KX18, 8NS |
|
S29GL128S90FHA020Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
CY7C106B-20VCRochester Electronics |
STANDARD SRAM, 256KX4, 20NS |
|
93LC46CXT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8SOIC |
|
25AA320A-I/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 8TSSOP |
|
BR24G04FVM-3GTTRROHM Semiconductor |
IC EEPROM 4KBIT I2C 400KHZ 8MSOP |
|
70V3579S5BCRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
MT58L1MY18FT-6.8Rochester Electronics |
CACHE SRAM, 1MX18, 6.8NS, CMOS, |
|
7024L20JGIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
