类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 2.5V ~ 2.7V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4C128M8D3LB-12BCNTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
MT58L128L36P1T-4.4Rochester Electronics |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
S34ML02G200GHI000Flip Electronics |
IC FLASH 2GBIT PARALLEL 67BGA |
|
24LC025/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
CY62158DV30LL-55BVITRochester Electronics |
STANDARD SRAM, 1MX8, 55NS |
|
MT41K256M16LY-107:N TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
AT27C4096-55JURoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 44PLCC |
|
93LC56AT/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
RMLV0408EGSB-4S2#HA1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
CY7C09349AV-12ACRochester Electronics |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
71V432S7PFGIRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
CAT24FC64WI-TE13Rochester Electronics |
IC EEPROM 64KBIT I2C 1MHZ 8SOIC |
|
IS42S16160J-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |