English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 4Gb (256M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 800 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-TFBGA |
| 供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1442KV33-250AXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
CY7C1370D-200BGXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
S29GL064N11FFIS12Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
93C46B/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
25AA010AT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ 8MSOP |
|
IS43LR32100D-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 90TFBGA |
|
CY62157EV30LL-55ZXETCypress Semiconductor |
IC SRAM 8MBIT PARALLEL 48TSOP I |
|
70T3319S133BFRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
M48Z58Y-70PC1STMicroelectronics |
IC NVSRAM 64KBIT PAR 28PCDIP |
|
70T651S10BFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208FPBGA |
|
CY7C144E-15JXIRochester Electronics |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
CY7C1049BV33-12VITRochester Electronics |
STANDARD SRAM, 512KX8, 12NS |
|
PC28F512P33BFDAlliance Memory, Inc. |
IC FLASH 512MBIT PARALLEL 64LBGA |
