TVS DIODE 180V 291.6V SMA
IC SRAM 4.5MBIT PARALLEL 119PBGA
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 4.5Mb (256K x 18) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 8 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT46V64M8BN-75 IT:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IS61LPS102418A-200B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AT28C16E-15SIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24SOIC |
|
AS4C128M16D3LA-12BCNTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
AT27C080-15RIRoving Networks / Microchip Technology |
IC EPROM 8MBIT PARALLEL 32SOIC |
|
IS61VF102418A-7.5B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IDT71V3558SA200BQGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IDT71V3558SA100BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS39LV010-70JCEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
IDT71V416YS15Y8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
S25FL129P0XBHV300Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
MT29F8G08ABABAWP-AATX:B TRMicron Technology |
IC FLASH 8GBIT PARALLEL 48TSOP I |
|
709379L9PF8Renesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |