类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 48-DIP (0.600", 15.24mm) |
供应商设备包: | 48-SIDE BRAZED |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT52L768M32D3PU-107 WT:BMicron Technology |
IC DRAM 24GBIT 933MHZ 168FBGA |
|
5962-8700207ZARenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
PC28F512P30BFBAlliance Memory, Inc. |
IC FLASH 512MBIT PARALLEL 64LBGA |
|
CP7670ATRochester Electronics |
TRUETOUCH |
|
M29W128GL70ZA6FFlip Electronics |
IC FLASH 128MBIT PARALLEL 64TBGA |
|
CAT93C66YGIRochester Electronics |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
MT53E512M32D2NP-046 WT:FMicron Technology |
LPDDR4 16G 512MX32 FBGA DDP |
|
MTFC8GLWDQ-3L AAT AMicron Technology |
IC FLASH 64GBIT MMC 100LBGA |
|
S29GL01GT11DHB023Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
CY7C1021B-12VIRochester Electronics |
STANDARD SRAM, 64KX16 |
|
S29PL127J65BFW040Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56FBGA |
|
MT29F1T08EEHBFJ4-T:B TRMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
5962-8700215ZARenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |