English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 100 kHz |
| 写周期时间 - 字，页: | 15ms |
| 访问时间: | 3.5 µs |
| 电压 - 电源: | 2.7V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY62157GE30-45ZXICypress Semiconductor |
IC SRAM 8MBIT PARALLEL 48TSOP I |
|
|
CG7634AARochester Electronics |
PREMIS SSCG EMI REDUCTION |
|
|
5962-9166202MXARenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PGA |
|
|
5962-8976404MXARenesas Electronics America |
IC SRAM 32KBIT PARALLEL SB48 |
|
|
7006L35GBRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PGA |
|
|
FM93C66ALEMT8XRochester Electronics |
EEPROM, 256X16, SERIAL, CMOS |
|
|
5962-9089901MUARochester Electronics |
FLASH, 128KX8, 250NS, CDFP32 |
|
|
MT53B1024M32D4NQ-062 WT:C TRMicron Technology |
IC DRAM 32GBIT 1600MHZ 200VFBGA |
|
|
IS43R16320F-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
|
CG7339AMRochester Electronics |
SPECIAL |
|
|
70V26L25GRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PGA |
|
|
S29GL01GT11DHB020Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
|
27LV512-20/L089Rochester Electronics |
512K (64K X 8) CMOS EPROM |
