类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500 |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | - |
双向通道: | 1 |
电压 - 反向间隔(典型值): | 33V |
电压 - 击穿(分钟): | 36.7V |
电压 - 钳位(最大值)@ ipp: | 53.3V |
电流 - 峰值脉冲 (10/1000µs): | 338A |
功率-峰值脉冲: | 18000W (18kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | Nonstandard SMD |
供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TLPA15CAWickmann / Littelfuse |
HI-REL TVS AXL HP TLPA15 BI |
|
SMCG6056E3/TR13Microsemi |
TVS DIODE 41V 73.5V DO215AB |
|
5KP220CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 220V 410V P600 |
|
5KP90E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 90V 160V P600 |
|
MXSMLG20ARoving Networks / Microchip Technology |
TVS DIODE 20V 32.4V DO215AB |
|
MXLSMCJ13CA/TRRoving Networks / Microchip Technology |
HI REL TVS |
|
JAN1N6117AUSRoving Networks / Microchip Technology |
TVS DIODE 22.8V 41.6V B SQ-MELF |
|
MAP6KE39AE3Roving Networks / Microchip Technology |
TVS DIODE 33.3V 53.9V T-18 |
|
SMCJ11CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
MXLPLAD6.5KP36CARoving Networks / Microchip Technology |
TVS DIODE 36V 58.1V PLAD |
|
MP6KE47AE3Roving Networks / Microchip Technology |
TVS DIODE 40.2V 64.8V T-18 |
|
MASMCG85AE3Roving Networks / Microchip Technology |
TVS DIODE 85V 137V DO215AB |
|
1N5660ARoving Networks / Microchip Technology |
TVS DIODE 111V 179V DO13 |