English
简体中文
MOSFET 2N-CH 60V 0.49A 6TSSOP
M83513/04-E07C, MCKS-C2-B-31S5
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 490mA |
| rds on (max) @ id, vgs: | 920mOhm @ 300mA, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 1.05nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 23pF @ 30V |
| 功率 - 最大值: | 410mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-TSSOP, SC-88, SOT-363 |
| 供应商设备包: | 6-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ISL6605CB-TS2495Rochester Electronics |
HALF BRIDGE BASED MOSFET DRIVER, |
|
MSCSM120AM03CT6LIAGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6C LI |
|
BSC155N06NDATMA1IR (Infineon Technologies) |
TRENCH 40<-<100V |
|
DMN32D2LV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 0.4A SOT-563 |
|
TSM250N02DCQ RFGTSC (Taiwan Semiconductor) |
MOSFET 2 N-CH 20V 5.8A 6TDFN |
|
DMP3036SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 30V 10.6A 8-SO |
|
SI4804CDY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 8A 8SO |
|
MSCSM120AM16CT1AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP1F |
|
SQ3985EV-T1_GE3Vishay / Siliconix |
MOSFET 2 P-CH 20V 3.9A 6TSOP |
|
SLA5075Sanken Electric Co., Ltd. |
MOSFET 6N-CH 500V 5A 15-SIP |
|
LM5100CMYRochester Electronics |
HALF BRIDGE BASED MOSFET DRIVER, |
|
DMC3401LDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V SOT363 |
|
EPC2106EPC |
GANFET TRANS SYM 100V BUMPED DIE |