English
简体中文
PWR XFMR LAMINATED 31.5VA CHAS
MOSFET 2N-CH 10.6V 8SOIC
FIFO MEM ASYNC 16K X 9
CAP ARRAY 33PF 25V NP0 0508
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | EPAD® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) Matched Pair |
| 场效应管特征: | Depletion Mode |
| 漏源电压 (vdss): | 10.6V |
| 电流 - 连续漏极 (id) @ 25°c: | 12mA, 3mA |
| rds on (max) @ id, vgs: | 500Ohm @ 3.6V |
| vgs(th) (最大值) @ id: | 360mV @ 1µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 2.5pF @ 5V |
| 功率 - 最大值: | 500mW |
| 工作温度: | 0°C ~ 70°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MSCSM120TAM11CTPAGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6P |
|
PMDPB56XNEAXNexperia |
MOSFET 2N-CH 30V 3.1A DFN2020D-6 |
|
BSM120D12P2C005ROHM Semiconductor |
MOSFET 2N-CH 1200V 120A MODULE |
|
UM6K31NTNROHM Semiconductor |
MOSFET 2N-CH 60V 0.25A UMT6 |
|
IPB080N03LGRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
IRF7507TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 20V 1.7A MICRO8 |
|
SIB912DK-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 1.5A SC-75-6 |
|
SSM6L35FU(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N/P-CH 20V 0.18A/0.1A US6 |
|
NTLJD2104PTAGRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
CSD86330Q3DTexas Instruments |
MOSFET 2N-CH 25V 20A 8LSON |
|
FC6546010RPanasonic |
MOSFET 2N-CH 60V 0.1A SMINI6-F3 |
|
HTMN5130SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 55V 2.6A 8SOIC |
|
IPG20N10S4L22AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 100V 20A TDSON-8 |