English
简体中文
SCR 650V 12A TO220AB
PM-MOSFET-SIC-SBD~-SP1F
RELAY REED SPST 500MA 5V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | 2 N Channel (Phase Leg) |
| 场效应管特征: | Silicon Carbide (SiC) |
| 漏源电压 (vdss): | 1200V (1.2kV) |
| 电流 - 连续漏极 (id) @ 25°c: | 55A (Tc) |
| rds on (max) @ id, vgs: | 50mOhm @ 40A, 20V |
| vgs(th) (最大值) @ id: | 2.7V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 137nC @ 20V |
| 输入电容 (ciss) (max) @ vds: | 1990pF @ 1000V |
| 功率 - 最大值: | 245W (Tc) |
| 工作温度: | -40°C ~ 175°C (TJ) |
| 安装类型: | Chassis Mount |
| 包/箱: | Module |
| 供应商设备包: | SP1F |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPG20N10S4L35ATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 8TDSON |
|
DMC3071LVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V TSOT26 T&R |
|
ALD110800SCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
|
2N7002BKV,115Nexperia |
MOSFET 2N-CH 60V 340MA SOT666 |
|
SI4288DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 9.2A 8SO |
|
FDS8984Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 7A 8SOIC |
|
PMV20XNEA,215Rochester Electronics |
6.3A, 20V, N CHANNEL, SILICON, M |
|
NTMFD5C466NLT1GSanyo Semiconductor/ON Semiconductor |
T6 40V LL S08FL DS |
|
US6M2GTRROHM Semiconductor |
2.5V DRIVE NCH+PCH MOSFET, 6 PIN |
|
SI3900DV-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 2A 6-TSOP |
|
FDMC3300NZARochester Electronics |
N-CHANNEL POWER MOSFET |
|
AON6912AAlpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 10A/13.8A 8DFN |
|
ALD114935PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |