类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 50V |
电流 - 连续漏极 (id) @ 25°c: | 2A |
rds on (max) @ id, vgs: | 300mOhm @ 1.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 15nC @ 10V |
输入电容 (ciss) (max) @ vds: | 250pF @ 25V |
功率 - 最大值: | 900mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDZ2553NZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FF11MR12W1M1PB11BPSA1IR (Infineon Technologies) |
MOSFET MODULE 1200V DUAL |
|
SI7997DP-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 30V 60A PPAK SO-8 |
|
SLA5212Sanken Electric Co., Ltd. |
MOSFET 3N/3P-CH 35V 8A 15-SIP |
|
CAS325M12HM2Wolfspeed - a Cree company |
MOSFET 2N-CH 1200V 444A MODULE |
|
SI4943BDY-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 20V 6.3A 8-SOIC |
|
ALD1117PALAdvanced Linear Devices, Inc. |
MOSFET 2P-CH 10.6V 8DIP |
|
IPG20N10S4L35AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 100V 20A 8TDSON |
|
FDS6894ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLJD3119CTBGSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V 6WDFN |
|
SP8M51TB1ROHM Semiconductor |
MOSFET N/P-CH 100V 3A/2.5A SOP8 |
|
SI4808DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 5.7A 8SOIC |
|
FDB12N50FTMRochester Electronics |
MOSFET N-CH 500V 11.5A D2PAK |