MOSFET 2P-CH 15V 1.17A 8-SOIC
CAP ALUM 150UF 20% 160V RADIAL
PG42 CORD GRIP, NPB/TPE/15
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 P-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 15V |
电流 - 连续漏极 (id) @ 25°c: | 1.17A |
rds on (max) @ id, vgs: | 180mOhm @ 1.5A, 10V |
vgs(th) (最大值) @ id: | 1.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 5.45nC @ 10V |
输入电容 (ciss) (max) @ vds: | - |
功率 - 最大值: | 840mW |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
TSM3911DCX6 RFGTSC (Taiwan Semiconductor) |
MOSFET 2 P-CH 20V 2.2A SOT26 |
![]() |
SI7972DP-T1-GE3Vishay / Siliconix |
MOSFET 2 N-CH 30V POWERPAK SO8 |
![]() |
MAX5054BATA+Rochester Electronics |
BUFFER/INVERTER BASED MOSFET DRI |
![]() |
IRF7509TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 30V 2.7A/2A MICRO8 |
![]() |
SI7913DN-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 20V 5A 1212-8 |
![]() |
SQJ968EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK SO8 |
![]() |
NTLUD3A260PZTAGSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 1.3A 6UDFN |
![]() |
MPIC2117PRochester Electronics |
BUFFER/INVERTER BASED MOSFET DRI |
![]() |
ALD210804PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
![]() |
SI7236DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 60A PPAK SO-8 |
![]() |
FDMB2307NZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 6MLP |
![]() |
IRLHS6276TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 20V 4.5A PQFN |
![]() |
SH8J31GZETBROHM Semiconductor |
60V PCH+PCH MIDDLE POWER MOSFET |