English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.2A (Ta) |
| rds on (max) @ id, vgs: | 140mOhm @ 2.2A, 4.5V |
| vgs(th) (最大值) @ id: | 950mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15.23nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 882.51pF @ 6V |
| 功率 - 最大值: | 1.15W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | SOT-23-6 |
| 供应商设备包: | SOT-26 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI7972DP-T1-GE3Vishay / Siliconix |
MOSFET 2 N-CH 30V POWERPAK SO8 |
|
MAX5054BATA+Rochester Electronics |
BUFFER/INVERTER BASED MOSFET DRI |
|
IRF7509TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 30V 2.7A/2A MICRO8 |
|
SI7913DN-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 20V 5A 1212-8 |
|
SQJ968EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK SO8 |
|
NTLUD3A260PZTAGSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 1.3A 6UDFN |
|
MPIC2117PRochester Electronics |
BUFFER/INVERTER BASED MOSFET DRI |
|
ALD210804PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
|
SI7236DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 60A PPAK SO-8 |
|
FDMB2307NZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 6MLP |
|
IRLHS6276TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 20V 4.5A PQFN |
|
SH8J31GZETBROHM Semiconductor |
60V PCH+PCH MIDDLE POWER MOSFET |
|
ALD212914SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC |
