类型 | 描述 |
---|---|
系列: | CoolMOS™ CFD2 |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 31.2A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 110mOhm @ 12.7A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 1.3mA |
栅极电荷 (qg) (max) @ vgs: | 118 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3240 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 34.7W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220 Full Pack |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
R8002ANXROHM Semiconductor |
MOSFET N-CH 800V 2A TO220FM |
|
PSMN8R2-80YS,115Nexperia |
MOSFET N-CH 80V 82A LFPAK56 |
|
NTB25P06T4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 27.5A D2PAK |
|
SI8802DB-T2-E1Vishay / Siliconix |
MOSFET N-CH 8V 4MICROFOOT |
|
IPL60R125C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 17A 4VSON |
|
NTMSD3P303R2Rochester Electronics |
MOSFET P-CH 30V 2.34A 8SOIC |
|
RSS065N06FRATBROHM Semiconductor |
MOSFET N-CH 60V 6.5A 8SOP |
|
NTMSD2P102LR2GRochester Electronics |
MOSFET P-CH 20V 2.3A 8SOIC |
|
TPIC5302DRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF3205LPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 110A TO262 |
|
BUK952R8-60E,127Rochester Electronics |
MOSFET N-CH 60V 120A TO220AB |
|
TSM045NA03CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 108A 8PDFN |
|
APT30M36JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 300V 76A ISOTOP |