类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 30A (Ta), 138A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2.3mOhm @ 50A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 90µA |
栅极电荷 (qg) (max) @ vgs: | 32 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2100 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.9W (Ta), 83W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | LFPAK4 (5x6) |
包/箱: | SOT-1023, 4-LFPAK |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVMFS4C310NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 17A/51A 5DFN |
|
STFU18N65M2STMicroelectronics |
MOSFET N-CH 650V 12A TO220FP |
|
SQM120N04-1M7L_GE3Vishay / Siliconix |
MOSFET N-CH 40V 120A TO263 |
|
FQP6N50CRochester Electronics |
MOSFET N-CH 500V 5.5A TO220-3 |
|
TSM048NB06LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 16A/107A 8PDFN |
|
FDS6675Rochester Electronics |
MOSFET P-CH 30V 11A 8SOIC |
|
IPD60R145CFD7ATMA1IR (Infineon Technologies) |
MOSFET N CH |
|
BSZ0702LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 17A/40A TSDSON |
|
SISS02DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 51A/80A PPAK |
|
STD16NF25STMicroelectronics |
MOSFET N-CH 250V 14A DPAK |
|
BUK7535-100A,127Rochester Electronics |
MOSFET N-CH 100V 41A TO220AB |
|
R6509KNJTLROHM Semiconductor |
MOSFET N-CH 650V 9A LPTS |
|
IPD50P04P413ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 50A TO252-3 |